Linards SKUJA

skujal.jpg (31256 bytes) Dr. habil. phys. Linards SKUJA
Leading Researcher
Institute of Solid State Physics,
University of Latvia

Kengaraga iela 8
Riga, LV 1063

Phone: +371 6726 0756
Fax: +371 6713 2778

Born: 1952, Riga, Latvia


Brief description of the main research:

The general research interests concern glassy/amorphous materials for optics and electronics. The main focus is on oxide materials based on SiO2 and GeO2. The motivation for studying these materials is provided by the outstanding physical properties of glassy SiO2 and the key role it plays in a number of modern applications: low-loss optical fibers for communications, ultraviolet and high-power laser optics, insulating oxide layers in silicon-based microelectronics, radiation resistant optical glasses etc. Our work mainly concerns point defects in these materials, their structure, generation mechanisms and optical properties, their impact on practical applications and devices.

Languages: Latvian, English, German, Russian



Work Abroad:

Honours and Awards

Professional Activities and Memberships:

Recent Publications (2006-2011):

  1. K. Kajihara, M.Hirano, L.Skuja, H.Hosono, Role of Interstitial Voids in Oxides on Formation and Stabilization of Reactive Radicals: Interstitial HO2 Radicals in F2 -Laser-Irradiated Amorphous SiO2. J. Amer.Chem.Soc., v.128, p.5371-5374 (2006).
  2. K. Kajihara, M.Hirano, L.Skuja, H.Hosono, Interstitial OH radicals in F2-laser-irradiated bulk amorphous SiO2. J.Phys.Chem.B v.110, p.10224-10227 (2006).
  3. L.Skuja, K. Kajihara, M. Hirano, A.. Saitoh,  H. Hosono, An increased F2 laser damage in "wet" silica glass due to atomic hydrogen: a new hydrogen-related E’-center. J. Non-Crystalline Solids, v.352, p.2297-2302 (2006).
  4. K. Kajihara, L.Skuja, M.Hirano, H.Hosono, Vacuum-ultraviolet absorption of interstitial O2 and H2O molecules in SiO2 glass. J. Non-Crystalline Solids, v.352, p.2303-2306 (2006).
  5. K. Kajihara, L.Skuja, M.Hirano, H.Hosono, In situ observation of the formation, diffusion, and reactions of hydrogenous species in F2 -laser-irradiated SiO2 glass using a pump-and-probe technique. Phys. Rev. v. B74, p.094202(1-11) (2006).
  6. K. Kajihara, M. Hirano, L.Skuja, H.Hosono Reactivity of SiCl and SiF groups in SiO2 glass with mobile interstitial O2 and H2O molecules. J. Non-Crystalline Solids, v.353, p.514-517 (2007).
  7. K. Kajihara, M. Hirano, L.Skuja, H.Hosono Formation of Intrinsic Point Defects in Fluorine-doped Synthetic SiO2 Glass by 60Co gamma-ray Irradiation  Chemistry Letters Vol.36, No.2, p.266-267 (2007).
  8. L. Skuja, K. Kajihara, M.Hirano, H.Hosono. Fluorine laser-induced silicon hydride Si-H groups in silica. J. Non-Crystalline Solids, v.353, p.526-529 (2007).
  9. K.Kajihara, M.Hirano, Y.Takimoto, L.Skuja, H.Hosono. Diffusion of nitrogen molecules in amorphous SiO2 . Appl.Phys. Lett. v.91, p.071904 (1-3) (2007).
  10. L. Skuja, K. Kajihara, M.Hirano, H.Hosono.  Ultraviolet absorption of hydrogen-related species in glassy silica, Physics and Chemistry of Glasses, European Journal of Glass Science and Technology B vol.48, No3, p.103-106 (2007).
  11. L. Skuja, K. Kajihara, M.Hirano, H.Hosono. Hydrogen-related radiation defects in SiO2 - based glasses. Nuclear Instruments and Methods in Physics Research Section B. v.266, No12-13, p.2971-75 (2008).
  12. K. Kajihara, T. Miura, H. Kamioka, A.Aiba, M. Uramoto, Y. Morimoto, M. Hirano, L. Skuja, H. Hosono, Diffusion and reactions of interstitial oxygen species in amorphous SiO2: A review. J.Non-Crystalline Solids v.354, p.224-232(2008).
  13. K. Kajihara, M. Hirano, L. Skuja, H. Hosono, Intrinsic defect formation in amorphous SiO2 by electronic excitation: Bond dissociation versus Frenkel mechanisms, Phys. Rev. B78, p.094201(1-8) (2008).
  14. K. Kajihara, M. Hirano, L. Skuja, H. Hosono, 60Co gamma-ray-induced intrinsic defect processes in fluorine-doped synthetic SiO2 glasses of different fluorine concentrations. Materials Science and Engineering: B  v.161 p.96-99 (2009) ( doi:10.1016/j.mseb.2008.11.002).
  15. K. Kajihara, T. Miura, H. Kamioka, M. Hirano, L. Skuja, H. Hosono, Oxygen exchange at the internal surface of amorphous SiO2 studied by photoluminescence of isotopically labeled oxygen molecules.  Phys. Rev. Letters v.102, 175502(2009).
  16. K. Kajihara, T. Miura, H. Kamioka, M. Hirano, L. Skuja, H. Hosono, Isotope Effect on the Infrared Photoluminescence Decay of Interstitial Oxygen Molecules in Amorphous SiO2 . Applied Physics Express vol.2, p. 056502 (2009).
  17. K. Kajihara, T. Miura, H. Kamioka, M. Hirano, L. Skuja, H. Hosono, Photoluminescence study of diffusion and reactions of 18O-labeled interstitial oxygen molecules in amorphous SiO2.  Electrochemical Society Transactions v.25 (9) p.277-285 (2009).
  18. K.Kajihara, T.Miura, H.Kamioka, M.Hirano. L.Skuja, H.Hosono, Diffusion of oxygen molecules in fluorine-doped amorphous SiO2 . Materials Science and Engineering: B173 p.158-161 (2010)(doi:10.1016/j.mseb.2010.01.002).
  19. K.Kajihara, T.Miura, H.Kamioka, M.Hirano. L.Skuja, H.Hosono, Exchange between interstitial oxygen molecules and network oxygen atoms in amorphous SiO2 studied by 18O isotope labeling and infrared photoluminescence spectroscopy. Phys.Rev. B83, 064202 (2011).
  20. L.Skuja, K.Kajihara, M.Hirano, H.Hosono, Crucial dependence of excimer laser toughness of “wet” silica on excess oxygen J. Non-Crystalline Solids v.357 p.1875–1878 (2011)  (doi:10.1016/j.jnoncrysol.2010.12.047).
  21. K.Kajihara, M.Hirano, L.Skuja, H.Hosono Oxygen-excess amorphous SiO2 with 18O-labeled interstitial oxygen molecules J. Non-Crystalline Solids v.357, No 8-9,  p.1842-1845(2011) .
  22. K.Kajihara, M.Hirano, L.Skuja, H.Hosono Frenkel defect process in amorphous silica Proc. of SPIE Vol. 8077  80770R-1 (2011).
  23. L.Skuja, K.Kajihara, M.Hirano, A.Silins, H.Hosono Effects of temperature on electron paramagnetic resonance of dangling oxygen bonds in amorphous silicon dioxide, IOP Conf. Series: Materials Science and Engineering 23 (2011) 012016
  24. L. Skuja, K. Kajihara, M. Hirano, H. Hosono, Visible to vacuum-UV range optical absorption of oxygen dangling bonds in amorphous SiO2, Phys.Rev.B 84, 205206 (2011) [9 pages]  doi: 10.1103/PhysRevB.84.205206

Research Projects:

Last update 20.01.2012